摘要
对高温退火非掺磷化铟 (In P)制备的半绝缘晶片的电学性质和均匀性进行了研究 .非掺低阻 N型磷化铟晶片分别在纯磷气氛和磷化铁气氛下进行 930℃、80 h退火均可获得半绝缘材料 .但在这两种条件下制备的两种 5 0 mm半绝缘晶片却呈现出不同的电学性质和均匀性 .纯磷气氛下制备的磷化铟片的电阻率和迁移率分别达到 10 6 Ω·cm和 180 0 cm2 / (V· s) ;而在磷化铁气氛下退火获得的半绝缘片的电阻率和迁移率分别高达 10 7Ω· cm 和30 0 0 cm2 / (V· s)以上 .对这两种半绝缘片和原生掺铁磷化铟半绝缘片的 PL - Mapping结果进一步比较表明 :在磷化铁气氛下退火获得的半绝缘材料的均匀性最好 。
Semi insulating (SI) InP wafers of 50mm and 75mm diameters are obtained by annealing of undoped liquid encapsulated Czochralski (LEC) N type InP at 930℃ for 80h in the ambient of pure phosphorus (P) or iron phosphide (FeP 2) respectively.Electrical properties and whole wafer uniformity of the SI InP wafers are studied by radial Hall effect measurements and PL mapping.The FeP 2 SI InP wafers exhibit good uniformity with the resistivity above 10 7Ω·cm and the mobility of 3000cm 2/(V·s).However,the P SI InP wafers have poor uniformity with the resistivity of 10 6Ω·cm and the mobility of 1800cm 2/(V·s).Some factors influencing the wafer uniformity are discussed.
基金
中国科学院半导体研究所材料中心科研发展基金资助项目~~
关键词
磷化铟
非掺
半绝缘
均匀性
半导体材料
indium phosphide(InP)
undoped semi insulating
Hall
PL Mapping
uniformity
