摘要
鉴于半导体放电管工作时的最高温升决定其浪涌能力 ,通过对器件进行温度场模拟 ,可以明显地看出基片厚度、载流子浓度以及元胞数对器件温升的影响 .因此对不同厚度、杂质浓度的 16元胞放电管进行了浪涌实验 .模拟和实验结果均表明 ,增加元胞数、选择均匀性好和较薄的衬底材料以及采用低扩散浓度方法可以减少放电管工作时的温升 。
The maximum operating temperature of silicon surge protection device determines its surge handing capability. The thermal simulation of device can illustrate the effects of the thickness of silicon chip, the concentration of carriers and the cell numbers on the temperature of device clearly. Based on this analysis, the surge test on the devices with various cell numbers, chip thickness and impurity concentration is processed. The test and the previous simulation demonstrate that the surge handling capability of device can be greatly improved by increasing the cell numbers, selecting uniform and thin substrate material, and adopting a way of low diffussing concentration.
出处
《华中科技大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2001年第11期67-69,共3页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
