摘要
本文采用数值分析模拟方法对新型类晶闸管结构的半导体浪涌吸收器件的关键特性进行了理论分析， 根据实际工艺条件决定了边界条件和分割点方案并编写了计算程序. 计算分析结果表明： 在满足正向转折电压要求情况下， 尽量减少有效基区宽度是降低通态压降、 提高器件过浪涌能力、 提高维持电流的关键措施. 实验制作两批样品， 测试结果证明了这一结论.
A numerical analysis of the semiconductor surge absorption device (SSAD) has been performed to examine how the key parameters of SSAD are affected by the design consideration and processing control . Both the computation and the measurement results of two batches of samples show that, to obtain a smaller on_state voltage drop and high surge current handling capability, higher holding current of the device, decreases greatly the base width in the design and processing.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2000年第7期40-44,共5页
Journal of South China University of Technology(Natural Science Edition)
基金
广东省自然科学基金资助项目!(960285)
