摘要
气相沉积ZrO2 膜常为柱状结构 ,要更好地控制ZrO2 膜性能 ,需要研究ZrO2 膜中柱状结构的形成和演化规律 .在射频溅射条件下沉积了ZrO2 膜 ,发现该膜的柱状晶具有 { 111}面织构 ,其底层可能还有等轴晶 .提出以下柱状晶形成机制 :在光滑 (玻璃 )基片上形成的柱状晶源自于在基片表面形成的具有 { 111}面织构的最初晶核 ;在较为粗糙 (多晶Al2 O3)基片表面上形成的柱状晶源自于〈111〉晶向与沉积物质流方向一致的晶核择优生长及随后对其它取向的小晶核的吞噬而形成的晶核群 .基片表面粗糙时 ,由于柱状晶核经过晶核筛选产生 ,柱状晶底部可能有等轴晶层 ;若温度较低 。
Columnar structure is the common microstructure of vapour deposited ZrO 2 thin films. To control the properties of ZrO 2 thin films, the law about columnar structure formation and evolution should be studied. ZrO 2 thin films were deposited with radio_frequency sputtering,a columnar structure layer with {111} texture and/or nether uniaxial crystal layer were observed on the films. Two mechanisms related to the microstructure were proposed for different substrates.On smooth (glass) substrate,the columnar structure originates from the crystal nuclei with {111} texture which nucleated direct on the substrate .On rough (multi_crystal Al 2O 3) substrate, the columnar structure originates from the crystal nuclei whose {111}crystal living direction coincide with the direction of the deposit flow and preferentially grow as expense of crystal nuclei with other direction. As the columnar crystal nuclei are the sifting product from random direction nuclei, it is easy to understand that there exists an uniaxial crystal layer under the columnar structure layer. The uniaxial crystal layer can be more obvious on the rough substrate and under low substrate temperature.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2001年第5期443-446,共4页
Journal of The Chinese Ceramic Society
