摘要
报道了采用离子辅助电子枪蒸发技术制备优质氧化锌透明导电膜的工艺和结果 ,分析了源掺杂 ,镀膜气氛 ,衬底温度等参数与膜的电导率及透光特性的关系 ,作出了电阻率低达 2× 1 0 - 3Ω· cm,厚为 40 0 nm的膜的方块电阻为 1× 1 0 3Ω/□ ,可见光透过率大于 80 %的优质透明导电膜。实验表明氧离子辅助蒸发可增加氧化锌分子的能量 ,提高其迁移率 ,显著提高薄膜的致密程度 ;氧离子能使分解的锌原子充分氧化 ;离子轰击可平滑薄膜表面。总之 。
The processing technology and the results of high quality ZnO thin solid films prepared by active electron beam evaporation with IAD are reported. The typical properties of the film are as followings: The resistivity is as low as 2×10 -3 Ω·cm. The sheet resistance of the film with thickness of 4×10 -8 cm is 1000Ω/□, and the average transparence for visible light is higher than 80%. The dependence of the films on doping of the source, atmosphere of the evaporating chamber, substrate temperature, etc. is analysed as well. The experimental results show that the ion assistant deposition(IAD) plays an important role in processing AZO film .
出处
《液晶与显示》
CAS
CSCD
2001年第2期135-139,共5页
Chinese Journal of Liquid Crystals and Displays
基金
中国科学院"九五"重大资助项目
高等学校重点实验室访问学者基金资助项目
