摘要
使用PbMg1/ 3Nb2 / 3O3 PbTiO3 PbCd1/ 2 W1/ 2 O3三元系电容器瓷料 ,采用流延工艺成膜 ,丝网印刷内电极 ,在 930～ 950℃下低温烧结的方法制备了陶瓷衬底。陶瓷厚膜在室温下的相对介电常数εr>1.4× 10 4 ,损耗tanδ≈ 1% ,具有极高的品质因素 (大于等于 80 μC/cm2 )。理论分析了电致发光器件的阈值电压与绝缘介质特性的关系。直接在陶瓷厚膜上制备了MIS结构和MISIM结构的以陶瓷厚膜为绝缘层的ZnS
A low temperature sintered multilayer ceramic substrate has been prepared consisting of a very high dielectric constant trinary system PMN PT PCW ceramic thick film insulating layer,Ag/Pd alloy internal electrodes and a ceramic base.The ceramic thick film and the internal electrodes are fabricated by casting tape process and silk screen process,respectively. The relative dielectric constant of the ceramic thick film is over 14 000 with the loss of about 1 % at room temperature,and figure of merit of above 80 μC/cm 2.The relationship between threshold voltage and dielectric properties are derived theoretically.Two types of CIEL devices with ZnS:Mn as an active layer have been manufactured and their EL characteristics are compared as well.
出处
《半导体光电》
CAS
CSCD
北大核心
2001年第2期82-86,共5页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目!(6 96 0 6 0 0 4)
上海市科委资助项目
关键词
陶瓷厚膜
流延工艺
介质材料
电致发光器件
薄膜
ceramic thick film
tape casting process
dielectric material
electroluminescence
