摘要
研究作为电致发光的加速层的SiO_2中电子的输运行为.给出SiO_2层中陷阶辅助电荷输运的理论模型,并用实验对这一模型进行了验证.认为电致发光条件下SiO_1层中的电子在低场下是以陷阱跳跃的形式输运的,而在高场下陷阱中的电子离化进入导带.
The electron transport behaviour in SiO2 used in TFEL is studied. The theoretical model of trap-well aided electron transport is given, and some experiments is conducted to prove the validity of this model. In the condition of TFEL, the electron transport in the form of hopping-trap in low electro field in SiO2, and electrons jumped up into conduct band from trap-well in the high electro-field.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第7期1164-1171,共8页
Acta Physica Sinica
基金
国家自然科学基金
国家"863"高科技项目资助的课题.
