摘要
为了提高光控晶闸管的触发灵敏度,我们在器件的受光区表面蒸镀上一层 SiO 减反射膜。本文在理论上指出了 SiO 膜作为减反射膜所必须满足的条件,并在实验上对 SiO 膜的减反射效果进行了验证,结果表明:SiO 膜的存在可使透射率由无膜时的0.68提高到0.94～1,光触发功率比无膜时减小了20～40％。
In order to improve light triggering sensitivity of a light triggered thyris- tor,a SiO antireflecting film is evaporated on the light sensitive gate area.In this paper,the condition in which a SiO film will make the antireflecting film,is th- eoretically indicated,and the effect of antireflection of the SiO film is experimen- tally tested and verified.The experimental results have shown that the transmissivity has increased from 0.68 to 0.94～1 and the light triggering power has decreased by 20～40%,utilizing the SiO antireflecting film.
出处
《半导体光电》
CAS
CSCD
北大核心
1990年第1期67-70,60,共5页
Semiconductor Optoelectronics
关键词
光控晶闸管
光触发灵敏度
减反射膜
反射率
透射率
氧化硅
Light Triggered Thyristor
Light Triggering Sensitivity
Antireflecting Film
Reflectivity
Transmissivity
