摘要
本文介绍一种高灵敏度光触发晶闸管的结构特点及关键的生产工艺,并对该器件进行了理论分析和主要参数的计算机辅助设计,提出了带有薄n层的台阶形光敏门极结构可使器件获得较高的光触发灵敏度和较好的触发灵敏度与dv/dt耐量间的协调关系。研制成功的直径为45mm、容量为500A、耐压为2000V的器件的最小光触发功率小于3mW,dv/dt耐量大于1000V/μs,di/dt耐量大于100A/μs通态峰值压降小于2V。
A 500 A,2000 V light-triggered thyristor has been developed.The device has characteristicsof a minimum light-triggering power of less than 3mW, dv/dt capability of more than1000 V/μs, di/dt capability of more than 100 A/μs and on-state voltage of less than 2V. Thestructure features, theoretical analyses, CAD of major parameters and key manufacturing technologiesof the device are described. An excellent compromise between dv/dt capabilityand lighttriggering sensitivity has been achieved by irradiating the light through a thin n-emitterlayer over the step-shaped light-sensitive gate area.
关键词
光控晶闸管
晶闸管
光触发
灵敏度
light-triggered thyristor
light-triggering sensitivity minimum light-triggering power
dv/dt capability
