摘要
以钽酸锂晶体作为晶体滤波器压电材料。通过优化离子束刻蚀工艺参数,采用间歇式离子束刻蚀方法,解决了刻蚀区微裂纹工艺问题,使厚度为60μm钽酸锂晶片减薄至30μm。利用反台阶结构晶片制作出了中心频率为70MHz、3dB带宽为1 109kHz的高基频宽带钽酸锂晶体滤波器。
The lithium tantalite crystal was used as the piezoelectric material for crystal filter. Through optimizing the ion beam etching technique parameters, the micro-crack in the etching area was overcome by using the interval ion beam etching technique, and the thickness of lithium tantalite wafer was thinned from 60 m to 30 m. A high fundamental frequency and wide-band lithium tantalite crystal filter with center frequency of 70 MHz and 3 dB bandwidth of 1 109 kHz was fabricated by using the negative-bench structure.
出处
《压电与声光》
CSCD
北大核心
2014年第3期474-475,共2页
Piezoelectrics & Acoustooptics
关键词
晶体滤波器
钽酸锂
离子束刻蚀
高频
宽带
crystal filter
lithium tantalate
ion beam etching
high frequency
wide-band
