摘要
研究了氢等离子体钝化多晶硅(poly-Si)薄膜中缺陷态的详细物理机制。结果表明,多晶硅中不同的缺陷态需要不同的氢等离子体基团予以钝化。Hα具有较低的能量,主要钝化悬挂键类缺陷态;H*具有较高的能量,对钝化晶界附近与镍杂质相关的缺陷态更有效;Hβ和Hγ具有的能量最高,可以用来钝化晶粒内部的缺陷态。这些分析和结果有利于优化H等离子体钝化多晶硅的条件,进一步提高多晶硅性能。
The mechanism of hydrogen plasma passivation for poly-Si thin films has been investigated.It has been found that different kind of hydrogen plasma radical was responsible for different defects passivation for poly-Si. The Hαwith low energy was mainly responsible for passivating the dangling-bond defects.The H＊ with higher energy may passivate the defects related to Ni impurity around the grain boundaries more effectively.In addi-tion,the Hβand Hγwith the highest energy are required to passivate intra-grain defects.These analysis and re-sults are very usable to optimize the H plasma passivation and make the passivation more effective.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2014年第3期88-91,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(61076006)
国家高技术研究发展计划(863计划)专项资助项目(2008AA03A335)
