期刊文献+

IGBT模块空洞率与其温度分布特性关系研究

Research on Relationship between IGBT Void Ratio and Its Temperature Distribution
下载PDF
导出
摘要 IGBT模块焊接层空洞会使得模块局部热阻增加、散热能力降低进而导致表面温度场畸变。本文基于红外热像仪和DSP控制单元搭建温度分布检测系统,实现IGBT模块温度场信息的采集、处理和分析。根据实验需要采用自制IGBT模块研究空洞对温度场的影响。通过对不同空洞尺寸的模块进行实验,获得空洞率与温度场分布特性之间的关系。结果表明IGBT模块温度分布特性可以用来进行空洞的定量检测,并给出了根据表面温度特性对IGBT模块性能评估的一般方法。 IGBT module welding layer voids would lead to partial thermal resistance increase,cooling capacity reduction,and temperature field distortion.The temperature detection system based on FLIR and the DSP control unit was built in this article to realize the acquisition,processing and analysis of IGBT module temperature field information. Experiments on home-made IGBT modules were done to research the effects of voids on temperature field according to experiment requirement.Through experiment on IGBT modules of different void ratios,the relationship between void ratio and temperature distribution characteristics was studied.Results proved that the temperature distribution characteristics of IGBT module can be used for quantitative detect of voids,besides,a method on performance evaluation of IGBT modules is given
出处 《现代科学仪器》 2014年第2期29-32,共4页 Modern Scientific Instruments
基金 国家重大专项02专项“高压大功率器件封装与测试平台的设计”(项目号:2011ZX02603)
关键词 IGBT模块 温度分布 检测系统 评估 IGBT module Temperature distribution Temperature detection system Evaluation
  • 相关文献

参考文献5

二级参考文献23

  • 1乔尔敏,温旭辉,郭新.基于IGBT并联技术的大功率智能模块研制[J].电工技术学报,2006,21(10):90-93. 被引量:13
  • 2吴时红,何双起.超声显微检测技术的应用研究[J].无损检测,2007,29(5):278-279. 被引量:8
  • 3Lefranc G, Licht T, Mitic G.Properties of Solders and Their Fatigue In Power Modules[J].Micro-electron Reliability, 2002,42(4) : 1641-1646. 被引量:1
  • 4B Du,J L Hudgins, E Santi,et al.Transient Electrothermal Simulation of Power Semiconductor Devices[J].IEEE Trans. on Power Electronic, 2010,25 ( 1 ) : 237-248. 被引量:1
  • 5Nelson J J,Venkataramanan G,A Id EI-Refaie.Fast Thermal Profiling of Power Semiconductor Devices Using Fourier Techniques[J].IEEE Trans. on Industry Electrocic, 2006,53 (2) : 521-529. 被引量:1
  • 6Chow T P, Baliga B J, et. al. A self-aligned short process for IGBT[J]. IEEE Transactions on ED, 1992(6): 1317-1320. 被引量:1
  • 7Pirondi A, Nicoletto G, Cova P, et al. Thermo- mechanical finite clement analysis in press-packed IGBT design[J]. Microelectronics Reliability, 2000(40): 1163-1172. 被引量:1
  • 8Yun Chansu, Malberti Paolo, Ciappa Mauro, et al. Thermal component model for electrothermal analysis of IGBT module systems[J]. IEEE Transactions on Advanced Packaging, 2001, 24(3): 401-406. 被引量:1
  • 9Shammas N Y A. Present problems of power module packaging technology[J]. Microelectronics Reliabilty, 2003(43): 519-527. 被引量:1
  • 10ANSYS Release 8.0 Documentation. 被引量:1

共引文献81

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部