期刊文献+

蒙特卡罗法模拟薄样品中低失能近轴背散射电子

Monte Carlo Simulation of Low Loss Energy and Coaxial Backscattered Electrons in a Thin Film Target
下载PDF
导出
摘要 用蒙特卡罗方法模拟计算了薄样品中的高能同轴背散射电子的背散射率和厚度衬度 .结果指出 :用较大的探测能量窗口和大的探测角可在确保厚度衬度的前提下增强信噪比 .大的入射能量虽有利于厚度衬度 ,但不利于提高信噪比 .薄膜沉积在异质衬底上的模拟结果显示 ,虽然背散射率中包含有衬底材料的信息 ,但还是膜层厚度的单调变化函数 ,有可能通过背散射率的测量来判定薄膜厚度 . By using the Monte Carlo method, we simulate the backscattering coefficient and the thickness contrast of low loss energy and coaxial backscattered electrons in thin film targets. The results show that the use of greater values of energy loss window and detection angle can ameliorate the thickness contrast and the ratio signal to noise at the same time. Though a greater value of primary energy enhances the thickness contrast, however it is not favorable for ratio signal to noise. The simulation results of a thin film deposed on substrate show that the information of substrate is consisted in the total backscattering coefficient which is a linear function of film thickness, so it is possible to determinate the film thickness by measuring the backscattering coefficient.
作者 蒋昌忠
出处 《武汉大学学报(自然科学版)》 CSCD 北大核心 2001年第1期91-94,共4页 Journal of Wuhan University(Natural Science Edition)
基金 国家自然科学基金!(1 0 0 4 50 0 1 1 0 0 0 50 0 5) 教育部骨干教师基金 武汉大学邵逸周研究基金资助项目
关键词 扫描电子显微镜 同轴背反射电子 蒙特卡罗模拟 薄膜 背散射率 厚度衬度 信噪比 scanning electron microscope (SEM) coaxial backscattered electron Monte Carlo simulation thin film
  • 相关文献

参考文献3

二级参考文献15

  • 1朱宜,汪裕苹,陈文雄.描电镜图象的形成处理和显微分析[J].北京:北京大学出版社,1989:104 被引量:1
  • 2Murata K. Depth Resolution of the Low and High Deflection Backscattered Electron Images in the Scanning Electron Microscope[J]. Phys Stat Sd(a), 1996,36:527. 被引量:1
  • 3Wells O C. Effects of colleetor take-off angle and energy filtering on the BSE image in the SEM[J]. Scanning,1979,2:199 被引量:1
  • 4Robinson V N E. The construction and uses of an efficient backscattered electron detector for SEM[J]. Jphys E,1974,7:650. 被引量:1
  • 5Jiang C Z. Mi Micrcscopie Electronique a Balayage Analytique:Simulation partechmiques de Monte Carb de la detection coaxiale des dectrons retrodiffuses[D]. Ph D Dissertation, Universite Claude Bernard Lyon-1, 1999, N0 109-99. 被引量:1
  • 6JIANG Chang-zhong. A New Type of Analytical Scanning Electron Microscope[D].J.of Wuhan University (Natural Science Edition) ,2000,46:91. 被引量:1
  • 7Bishop H E. Electron scattering in thick targets[J].Brit J Appl Phys, 1967,18:703. 被引量:1
  • 8Reimer L,Tollkamp C. Measuring the backscattering coefficient and secondary electron yield inside a SEM [J]. Scanning, 1980,3:35. 被引量:1
  • 9Drescher H, Reimer L, Seidel H. Ruckstreukoeffizient und Sekundarelektronen-Ausbeute yon 10-100 keV Elektronen und Beziehungen zur Raster-Elektronenmikroskopie[J]. Zangew Phys, 1970,29:331. 被引量:1
  • 10Rosenberg N,Jiang C Z, Morin P. Monte Carlo simulation of ooaxial backscattered electrons in SEM[J]. Ul-tramicroscopy, 1999,76: 97. 被引量:1

共引文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部