摘要
提出了在SF6/CHF3等离子中反应离子刻蚀WN金属层的方法,通过对各工艺参数(功率、压力、流量配比等)对WN刻蚀钻蚀量影响的研究,优化了工艺参数,获得了易于控制的侧向钻蚀量小于0.1μm的WN各向异性刻蚀条件,使BVEBO成品率由85%提高到95%,从而提升了芯片生产成品率。
WN metal layer was anisotropically etched by reactive ion etching（RIE）in SF6/ CHF3 plasma. An optimized research result was obtained by adjusting the process parameters, such as RF power, pressure and gas flow rate. On the basis of this research, the yield of BVEBO can be increased from 85% to 95%, so that the yield and reliability of chip production can be improved.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第2期188-191,共4页
Research & Progress of SSE
