摘要
基于标准工艺自主研制了L波段0．5μm栅长的GaNHEMT器件。该器件采用了利用MOCVD技术在3英寸（1英寸=2．54cm）SiC衬底上生长的A1GaN／GaN异质结外延材料，通过欧姆接触工艺的改进将欧姆接触电阻值控制在了0．4Ω·mm以内，采用场板技术提高了器件击穿电压，采用高选择比的刻蚀工艺得到了一定倾角的通孔，提高了器件的散热能力及增益。结果表明，采用该技术研制的两胞内匹配GaNHEMT器件在工作频率1．5～1．6GHz下，实现了输出功率大于66W、功率增益大于15．2dB、功率附加效率大于62．2％。
The L-band 0.5 μm GaN HEMT device was fabricated independently based on the standard process. The material stueture of the device was the A1GaN/GaN HEMT heterojunction structure, which was grown on the 3 inch （ 1 inch = 2.54 cm） SiC substrate. The process of Ohmic contact was optimized to reduce the contact resistance to less than 0.4 12 Ω· mm. The field plate structure was adopted to increase the breakdown voltage. And the optimization of etching technique with high selection ratio was taken to get rake angle via hole, improving the heat dissipation and gain. The results show that the inter- matching GaN HEMT is developed with the power over 66 W, the power gain of more than 15.2 dB, power-added efficiency of more than 62.2% on the working frequency of 1.5-1.6 GHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第5期357-360,369,共5页
Semiconductor Technology
