摘要
本实验以从一把伞南星(Arisaema erubescens(Wall.)Schott)组织分离到的内生细菌YBS106对三叶一心棉苗进行灌根诱导,同时挑战接种棉花枯萎病菌或棉花黄萎病菌,测定YBS106诱导对棉叶中抗性相关酶POD和PPO活性及与抗性相关的MDA和VC含量的影响,同时测定YBS106对棉花枯、黄萎病的相对防效。结果表明,YBS106诱导对POD和PPO活性及MDA和Vc含量均有显著影响。YBS106能有效诱棉叶中POD和PPO等防御酶活及Vc含量增加和MDA含量的减少,MDA和Vc含量在诱导后第5天达到最高,POD和PPO活性在诱导后第10天达到最高。病原菌挑战接种100 d时,YBS106对棉花枯萎病菌和黄萎病菌的相对防效分别为64.24%和71.37%,这与棉花系统抗性相关的防御酶活及相关物质(MDA和Vc)含量的变化趋势吻合。该结果表明YBS106诱导棉花产生了对棉花枯萎病菌和棉花黄萎病菌的系统抗性。
The induced resistance of Serratia marcescens strain YBS106 isolated from Arisaema erubescens（Wall.）Schott tissue to cotton fusarium and verticillium wilt was studied by measuring the change of the activities of defense enzymes（POD,PPO） and the contents of pathogenesis--related biochemicals（MDA,Vc）in cotton leaf inoculation with YBS106,Fusarium oxysporum,Verticillium dahliae and the control effects of strain YBS106 against to F. oxysporum and V.dahliae in pot tests.The results indicated that YBS106 effectively increased POD and PPO activities,also promoted concentration of MDA and Vc. When the F.oxysporum or V.dahliae used with YBS1O6, respectively,the induced activities of POD,PPO and concentration of Vc were higher than that of only used F. oxysporum or V. dahliae,but concentration of MDA were lower.The concentration of MDA and Vc peaked 5 day after the treatment while the activities of POD and PPO reached their maximum 10 day after the treatrnent.The relative anti-bacterial effects of strain YBS106 against to F.oxysporum and V.dahliae in pot tests when 100 day inoculated pathogen were 64.24% and 71.37%,which is related to changes consistent trend of the defense enzymes activity and related substances（MDA and Vc）content.Systemic resistance in cotton against to Fusarium oxysporum and Verticillium dahliae could be induced by the antagonistic bacteria Serratia marcescens strain YBS106.
出处
《科技资讯》
2014年第7期149-151,共3页
Science & Technology Information
基金
四川省教育厅项目(No.12ZA240)
乐山师范学院科研项目(No.Z1160
Z1223)
关键词
内生细菌
棉花
棉花枯萎病菌
棉花黄萎病菌
诱导抗性
Endophytic BacteriaICotton
Fusarium oxyspornm
Verticillium dahliae
Induced resistanc
