摘要
建立了一个新型的光控光导半导体开关 (简称光导开关 )解析模型 ,该模型通过拉氏变换求解了连续性方程 ,考虑了载流子的表面复合和体复合效应、载流子输运过程中的载流子载流子散射效应和漂移速度的负微分效应、光作用过程的丹倍效应和光的反射、光强随深度的衰减效应。计算了光导开关的几个重要参数并获得了开关电流和输出电压等的波形。计算表明光强与光电导的关系在所谓的“线性模式”下并非是严格线性的。最后将计算结果与实验结果进行了比较 ,两者相符较好。
A new analytical model for photoconductive semiconductor switches (PCSS) is proposed considering the surface and bulk recombinations, the carrier carrier scattering and the negative differential effect of the carrier drift velocity in their transport process, Dembet effect, optical reflection and attenuation with depth during the optical action. Some important parameters characterizing PCSS, such as on resistance and switching efficiency etc, have been simulated. Also the waveforms of the switch current and output voltage have been obtained. The calculations show that the relation between photo conductance and incident ligh intensity is not strictly linear but nonlinear in what is called linear operational mode of the switch. The good agreement has been obtained by comparing the calculation with the experimental data.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2001年第1期101-105,共5页
Acta Optica Sinica
基金
国家自然科学基金资助项目!(6 97810 0 2 )
关键词
拉氏变换
光导开关
解析模型
半导体
Laplace transform
photoconductive semiconductor switches
analytical model
Dembet effect
