摘要
利用正电子湮没寿命谱 (PAT)和X射线电子能谱 (XPS)研究了掺镧所引起的PbWO4 晶体缺陷的变化 .结果表明 :掺镧后 ,PbWO4 晶体中的正电子捕获中心铅空位 (VPb)浓度增加 ,并进一步诱导低价氧浓度的增加 .讨论了掺La的作用机制 ,认为掺La将抑制晶体中的氧空位 ,增加铅空位浓度 .
The changes of defects in PbWO\-4 crystal caused by La dopant have been studied by means of positron annihilation lifetime and X\|ray photoelectron spectrum (XPS).The results show that La dopant enhance the concentration of lead vacancy ( V Pb ) which can be described as the positron capture center in PbWO\-4 crystal,and lead vacancy will furthermore introduce low\|valent oxygen center.We discuss the mechanism of La doped in PbWO\-4,and consider that oxygen vacancy is restrained by doping of La,while lead vacancy density is increased by La dopant.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第10期2007-2010,共4页
Acta Physica Sinica
基金
国家自然科学基金!(批准号 :197740 43 )
上海市教委重点学科发展基金
上海市高等学校科学技术发展基金资助的课题&&
关键词
掺镧钨酸铅晶体
缺陷
PAT
XPS
La\|doped PbWO\-4 crystal, Positron annihilation lifetime spectrum, X\|ray photoelectron spectrum, defects
