摘要
反向窄沟道效应(INWE)是纳米级工艺下较为明显的版图效应,它使MOS管阈值电压Vth随着OD(扩散区)宽度的下降而下降,由此使得饱和电流Idsat提高并最终影响器件的速度.重点阐述了产生INWE的原因,同时将INWE考虑在标准单元库的设计当中.以TSMC N40LP 12T标准单元库为基础,根据INWE现象重新对电路结构(Circuit Structure)和版图(Layout)进行设计,最终能够在原有版图面积下整体性能提升5%以上,整体功耗升高控制在2%以内,从而得到有着更好PPA(Power Performance Area)指标的标准单元库器件.
INWE （Inverse narrow width effect） is a distinctive layout effect in nanometer scale, which will decrease the threshold voltage with the decreasing of the OD （Definition of diffusion area） width, finally, it will affect the speed with the increasing of Idsat （saturate current）. The key point of this paper is the application of INWE in VLSI design. Not only tell the reason of INWE in this paper, but also it redesigns the standard cell library taking the INWE into account. All the design of this paper is based on the TSMC N40LP12T standard cell library, the paper changes the structure of some circuits and re-plan the layout design. And it gains performance increase more than 5~ at the cost of lower than 2~ power consumption, which all occurs in the same area of the layout occupation. The better PPA （Power Performance Area） is all based on the INWE in the standard library design.
出处
《微电子学与计算机》
CSCD
北大核心
2014年第4期100-102,107,共4页
Microelectronics & Computer
关键词
反向窄沟道效应
器件物理特性
标准单元库设计
版图设计
inverse narrow width effect
physical characteristic of device
design of standard cell
layout design
