摘要
化学气相沉积(CVD)单晶金刚石是近年来金刚石领域研究焦点之一,在众多合成方法中,微波等离子体化学气相沉积(MPCVD)是诸多学者公认的稳定生长均匀高质量单晶金刚石最有前途的技术。近年来,MPCVD合成单晶金刚石在质量、速率、尺寸以及应用上取得了重大的进展,但是目前仍然有一个问题需要解决,即如何在保证质量的前提下大幅度提高单晶金刚石的生长速率。本文对CVD单晶金刚石过程中衬底的选择、表面加工与处理、基座的结构和沉积参数的选择进行了详细评述,并简要介绍了CVD单晶金刚石国内外研发成果。
The synthesis of CVD single crystal diamond is one of the focused fields in recent years. Among all synthetic methods, MPCVD method is universally accepted by many scholars as a technique for stable growth of uniform high quality single crystal. In recent years, MPCVD in synthetic single crystal has been made significant progress in quality, rate, size and application. However, there＇s still a problem to solve, which is how to increase the synthetic rate of single crystal diamond sharply with guaranteed quality. A detailed discussion is made on the growth process of CVD single crystal diamond, focusing on the substrate selection, surface process, pedestal structure and deposition parameters. A brief introduction is made about the achievements on CVD single crystal diamond.
出处
《金刚石与磨料磨具工程》
CAS
2014年第1期57-63,共7页
Diamond & Abrasives Engineering
基金
国家自然科学基金项目(10875093)
关键词
化学气相沉积
单晶金刚石
生长参数
研究成果
chemical vapor deposition （CVD）
single crystal diamond
growth parameter
achievement
