摘要
为提高阴极的发射性能以满足新型器件的需求,该文利用脉冲激光沉积技术制备了一种覆W+BaOSc2O3-SrO薄膜的浸渍扩散阴极。实验测得了该阴极在不同温度下的伏安特性曲线,并探讨了发射机制。结果表明,在1100?C工作温度下,该阴极的零场发射电流密度达到305.5 A/cm2;阴极表面形成的Ba-Sc-Sr-O活性层是阴极获得高发射性能的主要原因。文章还利用半导体模型解释了该阴极的非正常肖特基效应。
In order to improve the emission performance of cathodes to meet the demands of new type devices, this paper develops a new-type scandate cathode coated with W＋BaO-Sc203-SrO film prepared by Pulse Laser Deposition （PLD） technology. The experiment obtains emission current characteristics measured as a function of voltage and temperature and analyzes the emission mechanism. The test results indicate that at 1100℃ the current density of the new cathode reaches 305.5 A/cm^2; and the layer of Ba-Sc-Sr-O is the key to this excellent performance. The abnormal Schottky effect that the cathode appears is also investigated by using semiconductor model.
出处
《电子与信息学报》
EI
CSCD
北大核心
2014年第3期754-757,共4页
Journal of Electronics & Information Technology
关键词
钪型阴极
半导体模型
脉冲激光沉积
非正常肖特基效应
Scandate cathode
Semiconductor model
Pulse Laser Deposition （PLD）
Abnormal Schottky effect
