摘要
为了解析能量歧离与入射质子能量、靶材料及厚度的关系,利用Geant4程序模拟100 keV^2 MeV质子垂直入射Be、C、H2O、Al、Cu薄膜的方法。结果给出能量歧离与薄膜厚度、薄膜材料及入射质子能量的关系。得出能量歧离主要发生在入射质子100~200 keV能量范围内,且薄膜厚度越大,靶材料面电子密度越大,能量歧离越大;入射质子能量越大,能量歧离越小的结论。
Abstract： Objective ： To analyze of the relationship between the incident proton energy, target materials, the thickness of target materials and energy straggling. Method ：To use Geant4 program to simulate the incident proton energy of 100 keV -2 MeV vertically into Be, C, H2 O, Al, Cu film. Result ： Obtaining the relationship between the incident proton energy, target materials, the thickness of target materials and energy straggling. Conclusion：Energy straggling mainly occurs in the range of energy from 100 keV to 200keV. The greater the thickness of target materials and the electron density of target material are, the greater the energy straggling is. Energy straggling is also associated with the incident proton energy. The greater the incident proton energy is, the smaller the energy straggling is.
出处
《黑龙江科学》
2014年第1期14-16,共3页
Heilongjiang Science
基金
黑龙江省科学院青年创新基金项目"基于Monte Carlo方法研究质子打薄靶的角度和能量岐离现象"(CX12C03)
关键词
GEANT4
质子
能量歧离
薄膜
Key words ： Geant4
proton
energy straggling
thin film
