摘要
考虑具非均匀介电常数的半导体方程组的初边值问题．采用逼近解过程，利用不动点原理证明逼近解的存在性，经过对逼近解建立先验估计，根据紧致性原理证明了该问题整体弱解的存在性．
In this paper we consider the initial boundary value problem of semiconductor e-quations with discontinuous permittivities. We prove the existence of a weak solution to these problem. The proof is based on an approximation of these equation by a system with bounded non-linearities, deriving a priori estimates on the approximate solutions and then carrying out the passage to limit.
出处
《数学物理学报（A辑）》
CSCD
北大核心
2001年第1期62-69,共8页
Acta Mathematica Scientia
基金
国家自然科学基金资助(19872010)
北京航空航天大学理学院基金资助
关键词
半导体方程组
非均匀介电常数
初边值问题
整体弱解
半导体器件
Semiconductor equations, Discontinuous permittivities, Initial boundary value problem,Global weak solution.
