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一种制备MexSey(Me=Cu,In,Ga)的简便工艺 被引量:1

A Simple Preparation Process of Me_xSe_y(Me=Cu,In,Ga)
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摘要 提出了一种制备太阳能电池靶材CIGS的中间产物Cu2Se、In2Se3和Ga2Se3的简便工艺。以高纯铜粉、铟块、镓块、硒粉为原料,根据中间产物的化学计量比配制混合粉末,先进行热分析,然后将粉末装入石英管中,在抽真空的状态下用乙炔火焰将石英管密封,分别加热到300℃、500℃、650℃和770℃,最后打破石英管取出产物研成粉末,进行XRD分析。结果表明:在升温速率为1℃·min-1、冷却方式为炉冷的条件下,300℃保温3h得到单相的Cu2Se;300℃、500℃和650℃分别保温3h,得到单相的In2Se3;300℃、500℃、650℃和770℃分别保温3h,得到Ga2Se3相和少量的GaSe相。 A simple preparation process of intermediates of CIGS target such as Cu2 Se, Inz Se3 and Gaz Se3 is proposed. Using high purity copper powder, indium block, gallium block and selenium powder as raw materials, according to the stoichiometric proportion of intermediate compounds, the mixed powder is prepared. Firstly, the thermal analysis is applied. And then put the mixed powder into quartz tube,seal it under vacuum condi- tions,take it into the resistance furnace,and heat it at 300 ℃, 500 ℃, 650 ℃ and 770 ℃,respectively. Finally, break the quartz tube to collect the bulk and grind it into powder. The result of XRD analysis shows, when heat- ing rate is 1 'C ·min-1 with furnace cooling, thermal insulation at 300 ℃ for 3 h can obtain a single Cuz Se phase,thermal insulation at 300 ℃ ,500 ℃ and 650 ℃ for 3 h respectively can obtain a single InzSe3 phase,ther- mal insulation at 300 ℃ ,500 ℃ ,650 ℃ and 770 ℃ for 3 h respectively can obtain GazSe3 phase and a little GaSe phase.
出处 《化学与生物工程》 CAS 2014年第2期38-41,共4页 Chemistry & Bioengineering
基金 云南省科技厅院所技术开发专项(项目编号:2012010202)的经费支持
关键词 Cu2Se In2Se3 Ga2Se3 CIGS靶材 Cu2 Se In2 Se3 Ga2 Se3 CIGS target
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