摘要
合理的栅极驱动方式是功率MOSFET稳定可靠工作的前提。理想的栅极驱动电路应满足di/dt和du/dt小、开关速度快且开关损耗低等要求,但这些要求彼此之间存在冲突:驱动功率过小,将使其开关过程缓慢,增加开关损耗;驱动功率过大,将导致di/dt和du/dt过大,以至于产生严重的电磁干扰,影响系统的稳定运行。本文详细分析了MOSFET的导通过程,提出了基于动态电源的优化驱动方式。在专用驱动芯片的基础上,设计了辅助驱动系统,并做了详细地分析计算,实现了双电源驱动和驱动电阻的动态调节。最后将该驱动方式应用于开关磁阻电机控制系统中,验证了其合理性和正确性。
Reasonable design of gate driving is very important for MOSFET to work well. The ideal gate driving circuit should have low di/dt and du/dt, low switching loss and quick switching speed etc. But there are conflicts among these requirements： low gate driving power will increase the switching loss, and high di/dt and du/dt introduced by high gate driving power will cause serious electromagnetic interference. This paper analyzes the opening process of MOSFET in detail, and proposes an optimized driving method based on dynamic power. An auxiliary driving system is designed and a detailed analysis of the driving process is given too. Dual power supply is used in this design and the driving resistance could also be dynamic adjustment. Finally, the effectiveness of the proposed design is demonstrated through SR motor experiments.
出处
《电工技术学报》
EI
CSCD
北大核心
2013年第12期269-275,共7页
Transactions of China Electrotechnical Society
基金
国家自然科学基金资助项目(51277111/E070303)
关键词
MOSFET驱动优化
动态电源
MOSFET optimization of driving dynamic power source
