摘要
Marx发生器是一种广泛应用的高压脉冲电源,由高储能密度、低电感的电容器和电子开关组成,利用电容充放电方式产生高压脉冲.本研究通过分析经典Marx发生器的充放电特性,提出一种基于功率金属氧化物半导体场效应管(metal-oxide-semiconductor field-effect transistor,MOSFET)的负高压电路设计方法.测试结果表明,该电路在所加直流电压为1 500 V时,能够产生幅度为2倍于直流供电电压,下降沿小于10 ns的负高压脉冲.
Marx generator is widely used in the high-voltage pulse generation which consists of electronic switches and capacitors with low inductance and high energy density. The high voltage pulse is generated while the capacitors charge and discharge through the electronic switches. The charging and discharging characteristics of classic Marx generator is simulated in this paper while the power metal-oxide-semiconductor field-effect transistors are used as the electronic switches. Tests show that the circuit can produce a negative high voltage pulse, the amplitude of which is twice that of the applied DC voltage of 1 500 V and the falling time is less than 10 ns.
出处
《深圳大学学报（理工版）》
EI
CAS
北大核心
2014年第1期30-34,共5页
Journal of Shenzhen University(Science and Engineering)
基金
国家高技术研究发展计划资助项目(201***019)~~
