摘要
随着激光器的发展，需要高重复率的电光调Q器件。提出了一种新型超快、高重复率的电光调Q技术，这种技术采用V型槽的金属氧化物半导体场效应晶体管（VMOSFET）器件作为调Q模块的主功率开关，运用宽范围可调的高压稳压电源和调Q触发信号整形电路，以及加压调Q和退压调Q的兼容电路。实验中得出：当调Q工作频率为10kHz时，调Q电压幅度3～5kV任意可调，电压脉冲宽度小于5ns，触发抖动时间小于1μs，且可以长期稳定工作。该调Q模块已经用于激光二极管（LD）抽运的无水冷固体Nd：YAG激光器和连续Nd=YAG激光器中。
High repetition rate electro-optically Q-switched component is needed with the development of laser. By experiment, a novel ultra quick and high repetition rate electro-optically Q-switched technology is presented. Vertical metal oxide semiconductor field effect transistor （VMOSFET） is adopted as main power switch of Q- switched module. Adjustable high voltage-stabilized source and reshaping circuit of Q-switched trigger signal, as well as the compatible circuit for adding voltage and draw back voltage of Q-switching are used. In the experiment, when the Q-switched module operating at 10 kHz, Q-switched voltage ranges freely from 3 kV to 5 kV, the width of voltage pulse is less than 5 ns, the shaking time of pulse is less than 1 μs, it works steadily and chronically. The Q-switched module has already been used in the laser diode （LD） pumped without water cooling solid Nd： YAG laser and continuously Nd：YAG laser.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2006年第10期1329-1333,共5页
Chinese Journal of Lasers
关键词
应用光学
电光调Q
金属氧化物半导体场效应晶体管器件
高重复率
applied optics
electro-optically Q-switching
vertical metal oxide semiconductor field effect transistor component
high repetition rate
