摘要
依据退化实验结果,并结合半导体器件工艺模拟软件TCAD仿真,详细研究了高压绝缘体上硅(SOI)p型横向双扩散MOSFET(pLDMOS)饱和电流的热载流子退化机理,以及不同沟道长度和漂移区长度对器件热载流子退化的影响。研究结果表明,在应力初始阶段,热电子注入机制强于界面态机制,饱和电流随着应力时间的增加而增加;应力后期,界面态机制强于电子注入机制,饱和电流逐渐减小。此外,研究还发现,器件沟道越长,饱和电流退化越小;漂移区越长,饱和电流退化也越小。
According to the degradation measurement results, combining with the TCAD simulations, the saturation cur- rent hot-carrier degradation of high voltage p-type lateral diffused MOSFET（pLDMOS） based on silicon on insulator（SOI） with different lengths of channel region and drift region are investigated.The results show that, at the beginning of the stress, the hot-electron injection mechanism is stronger than the mechanism of interface state generation, leading to the saturation current increase with the stress time ; at the end of the stress, the mechanism of interface state generation is stronger,resulting in the Saturation current decrease gradually.In addition, the investigation also show that, the longer length of channel region is, the smaller degradation of saturation current will be;the longer length of drift region is, the smaller degradation of saturation current also will be.
出处
《电力电子技术》
CSCD
北大核心
2013年第12期13-15,共3页
Power Electronics
基金
国家自然科学基金(61306092)
东南大学研究生科研基金(YBJJ1311)~~
关键词
晶体管
沟道长度
漂移区长度
饱和电流
transistor
channel region length
drift region length
saturation current
