摘要
采用浇铸成膜工艺在80℃下制备了纳米CoFe2O4掺杂的PVDF薄膜,利用XRD、SEM、FT-IR和铁电材料参数测试仪等研究了CoFe2O4的掺杂量对β相PVDF的相对含量及所制复合膜的介电和铁电性能的影响。结果表明:当CoFe2O4掺杂量为0.2%(质量分数)时,复合膜中β相PVDF的相对含量高达73.5%;样品在频率70 Hz,电场强度6×104V/cm时的最大极化强度为4.26×10–6C/cm2;当频率为1 kHz,偏压为1 V时,样品的相对介电常数和损耗角正切值分别为9.8和0.074。
PVDF films doped with nano CoFe2O4 were prepared by solvent casting method at 80℃. The effects of CoFe2O4 doping amount on relative content of 13 phase PVDF, dielectric and ferroelectric properties of the prepared composite films were investigated by SEM, XRD, FT-IR and ferroelectric material parameter tester. The results indicate that when the CoFe2O4 doping amount is 0.2% （mass fraction）, the relative content of 13 phase PVDF in composite film can be up to 73.5%;when the electric field intensity is 6× 10^4 V/cm at frequency of 70 Hz, the maximum polarization of sample is 4.26× 10-6 C/cm2; meanwhile when the bias voltage is I V and the frequency is 1 kHz, the relative dielectric constant and dielectric loss of sample are 9.8 and 0.074, respectively.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2013年第12期21-24,共4页
Electronic Components And Materials
基金
武汉市科技计划项目(No.201210321103
No.2013010501010133)
科技型中小企业技术创新基金(No.12C26214405276
No.12C26114405436)
