摘要
对48微米铝箔集流体在50 Hz交流电腐蚀下进行正交试验的研究,包括因子盐酸、铝离子、硫酸及温度等条件,发现了取得比容的最佳条件是各个因素的相互作用。讨论了在低电量时,高浓度的盐酸更趋向于形成发孔密度大、孔洞大小均一的腐蚀孔,而失重效率反而低于2N盐酸,可能是因为高浓度盐酸在交流电解负半周的沉积膜保护作用而导致。SEM分析显示备我们所制备的样品表面形貌抛光图与日本进口集流体形貌极为相似。
Orthogonal test of 48 ttm AI foil as current collector for 50 Hz AC etching is studied, including factors of HCI, Al3＋, H2SO4 and temperature. It is found that the best condition of capacitance for AI current collector is the interaction by every factors. Under low electric quantity, high concentration of HCI result in uniform and high density of pits are discussed, but weight loss efficiency is lower than 2N HCI, which is possible due to the protective effect of the deposited film generated by the negative half-cycle of AC etching. The morphologies from SEM analysis show that the samples produced by us are similar with Japanese current collector.
出处
《广东化工》
CAS
2013年第21期52-54,共3页
Guangdong Chemical Industry
基金
广东省重大科技专项资助项目(2010A080404003)
关键词
集流体
铝箔
交流腐蚀
比容
SEM
current collector AI foil AC etching capacitance SEM
