摘要
在半导体或者绝缘衬底上利用化学气相沉积方法生长石墨烯和在金属上生长石墨烯相比具有很明显的优势,它克服了前期转移石墨烯时引入的杂质污染和缺陷产生的问题。本文提出了一种新的近程催化的方法可以在蓝宝石衬底上直接进行石墨烯的生长。该方法利用了金属作为催化剂的优势,又避免了转移石墨烯的过程。该方法能制备出完全覆盖衬底的石墨烯,同时石墨烯畴的大小接近1μm。基于生长过程中石墨烯的成核和畴的生长,本文提出了近程催化的生长机理。
Growth of graphene on semiconducting or insulating substrates can be advantageous compared with that on metal by chemical vapour deposition,in that it circumvents the post-growth transfer,which is known to introduce contaminations and defects.We demonstrate a novel proximity catalysis method to directly grow graphene on sapphire substrates.The method has benefits of no need for transferring,while it still takes advantage of metal as a catalyst.Graphene of full coverage can be grown and the domain size is approaching one micron.Study on the nucleation and growth of graphene domains sheds light on the growth mechanism.
出处
《电子显微学报》
CAS
CSCD
2013年第5期365-371,共7页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金资助项目(Nos.11074007
11234001)
MOST(No.2012CB933404)
关键词
石墨烯生长
近程催化
化学气相沉积
蓝宝石
graphene growth
proximity catalysis
chemical vapour deposition
sapphire
