摘要
电子倍增型GaAs光阴极是利用雪崩倍增效应的一种新型光阴极组件,通过在常规GaAs光阴极中引入雪崩电子倍增层制备了GaAs光阴极/电子倍增器一体化组件,研究了该组件的热清洗温度、电子增益等性能.对组件热清洗工艺前后的I-V特性进行了对比测试,结果表明,该组件可以承受580℃的热清洗温度,并获得了12.6倍的电子增益;880nm处的探测灵敏度≥3.87mA/w;暗电流密度≤6.79×10-5mA/cm2.
GaAs photocathode with avalanche electron multiplier is a new type photocathode and fabricated by adding the avalanche electron multiplication layer in typical GaAs photocathode,the hot clean temperature、electron gain and other performance of the photocathode component are investigated.The I-V characteristic of the photocathode component after and before hot cleaning was measured and analyzed.The experimental results were shown that photocathode component can endure 580℃ hot cleaning temperature and got electron gain 12.6,the radiation sensitivity is greater or equal to 3.87mA/w at 880nm of wave length,the dark current density is less than or equal to 6.79×10-5mA/cm2.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2013年第8期1549-1554,共6页
Acta Electronica Sinica
关键词
砷化镓
光阴极
雪崩倍增
电子增益
负电子亲和势
GaAs
photocathode
avalanche mulitplication
electron gain
negative electron affinity
