摘要
The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes （FS- FCLEDs） using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and two-step roughening methods are compared. The results indicate that two-step roughening meth- ods show more potential for light extraction. Compared with flat FS-FCLEDs, the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.
The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes （FS- FCLEDs） using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and two-step roughening methods are compared. The results indicate that two-step roughening meth- ods show more potential for light extraction. Compared with flat FS-FCLEDs, the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.
基金
supported by the National Natural Science Foundation of China(Nos.61274040,61274008)
the National Basic Research Program of China(No.2011CB301902)
the National High Technology Program of China(No.2011AA03A103)
