摘要
在高真空系统中 ,将C70 膜淀积在 (1 0 0 )晶向n型和p型GaAs衬底上 ,形成固体C70 n GaAs和C70 p GaAs两种接触。电学测量表明两种接触均是强整流结 ,在偏压为± 1V时 ,它们的整流比分别大于 1 0 6和 1 0 4 ,以及在固定正向偏压下 ,它们的电流都是温度倒数的指数函数 ,从中确定了它们的有效势垒高度分别为 0 .784eV和0 .5 31eV。深能级瞬态谱 (DLTS)和C -t测量发现在C70 GaAs界面上存在一个电子陷阱E(0 .6 40eV)和一个空穴陷阱H3(0 .82 2eV) ,以及在近界面的固体C70 中存在两个空穴陷阱H4 (1 .1 5 5eV)和H5(0 .85 6eV)。
Solid C 70 /GaAs contacts were made by vacuum deposition of solid C 70 film on the n type and p typeepitaxial GaAs (100) substrates and their electrical properties were studied. It was found that these two kinds of contacts are strongly rectifying heterojunctions. The rectification ratio was higher than 10 6 and 10 4 for the C 70 /n GaAs and C 70 /p GaAs contacts at a bias of ±1V, respectively. At a fixed forward voltage, the current is an exponential function of reciprocal temperature,from which the effective barrier height was determined to be 0.784 eV and 0.531eV for the C 70 /n GaAsand C 70 /p GaAs contacts, respectively. One electron trap, E(0.640 eV),and three hole traps, H 3 (0.822eV), H 4 (1.155eV) and H 5 (0.856eV ),were observed at and near the solid C 70 /GaAs interface by the deep level transient spectroscopy (DLTS )and C t technique.
出处
《功能材料与器件学报》
CAS
CSCD
2000年第4期436-439,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金!资助项目 ( 19774 0 0 3)
