摘要
以倒装芯片为对象,通过自行设计研发的试验装置,研究电-热-应力耦合场中无铅互连焊点的蠕变规律与组织结构演变。研究表明,在加入大电流,达到电迁移门槛值的条件下,电流会减缓倒装芯片凸点的蠕变过程,凸点断裂主要是受到金属间化合物界面形态控制,反映了与绝热蠕变样品的巨大差异。
This paper aims to investigate the interconnected solder joints of the flip-chip and explore their creep behavior and structural evolution under the current,thermal and stress coupling fields through self-designed experimental device.Results show that,when adding the large current to reach the threshold value of electromigration,the creep process of flip-chip bumps is slowed down by the current.The fracture of these joints is controlled by IMC interface morphology,which leads to huge differences in the creep behavior under the isothermal condition.
出处
《中国科技论文》
CAS
北大核心
2013年第8期764-767,共4页
China Sciencepaper
基金
高等学校博士学科点专项科研基金资助项目(20090142120041)
国家自然科学基金资助项目(60876070)
关键词
倒装芯片
电流密度
蠕变
电迁移
界面化学
flip chip
current density
creep
electromigration
interface chemistry
