摘要
采用辉光放电质谱法（GD—MS）测定太阳能级多晶硅中B，P，Fe，Co，Nj，Cu，Zn等痕量杂质元素，并优化和选择了GD．MS工作参数。考察了在半定量分析的情况下，GD-MS测定痕量杂质的精密度。结果表明，GD．MS对B，P，Na，A1，K，Ca，Fe，Ni，Cu，Co，Zn等元素测定结果的RSD都小于30％。用ICP—MS法进行验证，检出限O．14～2．85ng／mL，RSD为1．6％-12％，加标回收率85．2％。125％。
Trace impure elements B, P, Fe, Co, Ni, Cu and Zn in solar grade polysilicon were determined by glow discharge mass spectrometry（GD-MS）. The operating parameters and conditions of GD-MS were optimized and selected. Under the conditions f semi-quantitative, precision of the trace impurity determined by the GD-MS was investigated. The results show that all RSDsof B, P, Na, A1, K, Ca, Fe, Ni, Cu, Co and Zn were less than 30%, and the precisions were good. Partial results of elements determined by GD-MS coincided with those by inductively coupled plasma mass spectrometry （ICP-MS）. With verification test by ICP-MS, the recoveries of standard addition were 85.2% - 125%, the detection limit were 0. 14 ~ 2. 85 ng/mL and RSDs were 1.6% -12%.
出处
《分析试验室》
CAS
CSCD
北大核心
2013年第9期59-62,共4页
Chinese Journal of Analysis Laboratory
基金
国家科技部创新方法专项(2010IM031300)
国家电子信息产业发展基金(工信部财函[2011]506号)资助
