摘要
采用射频磁控溅射法,通过优化沉积工艺,在n型(100)Si片上制备出(100)择优取向表面粗糙度均匀的氮化铝(AlN)薄膜。当溅射功率为120 W和N2∶Ar=12∶8时,制备的AlN薄膜的结晶性最好,101.6mm AlN薄膜样品的表面粗糙度为3.31-3.03nm,平均值为3.17nm。研究结果表明:射频磁控溅射能量和N2浓度是实现大面积、均匀平坦、纳米级AlN薄膜的重要制备工艺参数。
The preparation of large-area uniform and flat nanometer AlN film is of great significance for the manufacture of high performance surface acoustic wave （SAW） device. AlN thin films with preferential orientation （100） and uniform surface roughness have been deposited on Si （100） substrates by RF magnetron sputtering and the deposition process is optimized. The results show that when the sputtering power is 120 W, N2 ：Ar= 12 ： 8, the crystalline of AlN thin film is the best and the surface roughness of （101.6 mm）AlN thin film is from 3.03 nm to 3.31 nm,and the average of surface roughness is 3. 17 nm. The results also show that the RF magnetron sputtering power and the nitrogen concentration are the important parameters for the preparation of large-area uniform and flat nanometer AlN films.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2013年第9期1739-1744,共6页
Journal of Optoelectronics·Laser
基金
国家自然科学基金(61106007)
天津市科技计划(10JCYBJC05900)资助项目
