摘要
对超大规模集成电路制备中二氧化硅介质的抛光机理、工艺条件的选择进行了大量理论和实验研究 ,着重研究了使用化学方法提高抛光速率、改善表面状况以及如何解决抛光浆料的沉积等问题 ,并实现了技术突破。
The mechanism and the choice of processing conditions of silica dielectric in ULSI manufacturing were studied.The way of increasing the polishing rate and improving the surface condition by using chemical method was suggested.The question of deposition of slurry was resolved and the technological breakthrough was made.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2000年第6期415-418,共4页
Chinese Journal of Rare Metals
关键词
化学机械抛光
全局平面化
ULSI
二氧化硅
CMP,Global planarization,Multilayer interconnection,ULSI,Silica dielectric
