摘要
热蒸发制备Zn掺杂SnS2薄膜,研究不同Zn含量及热处理条件对薄膜的物相结构、表面形貌和光电性能的影响。实验给出用Sn∶S=1∶1.08(wt)混合粉末沉积的薄膜,经380℃、15min热处理后得到简单正交晶系的SnS2薄膜;9(wt%)掺Zn后的薄膜热处理条件为370℃、20min。Sn、S和Zn分别以正4价、负2价和正2价存在于薄膜中。SnS2薄膜的直接光学带隙为2.12eV,掺Zn后为2.07eV;薄膜的电阻率从未掺Zn时的4.97×102Ω.cm降低到2.0Ω.cm,下降了两个数量级,所有SnS2薄膜导电类型均为N型。
Zn doped SnS 2 thin films were prepared by thermal evaporation.Effects of Zn contents and heat-treatment condition on thin film phase structure,surface morphology and photoelectric performance were investigated.Results show that after heat-treatment at 380℃for 15min the films with weight ratio of Sn to S =1∶1.08take on simple orthorhombic structure.The heat-treatment condition of 9wt% Zn doped SnS 2 thin films was at 370℃for 20min.The state of Sn,S and Zn were Sn 4＋,S 2and Zn 2＋.After Zn doping,the direct optical band gap of SnS2thin films reduced from 2.12eV to 2.07eV,and the resistivity two orders of magnitude decreased from 4.97×10 2 Ω.cm to 2.0Ω.cm.The conduting type of all SnS2thin films was n-type.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2013年第4期562-567,共6页
Journal of Materials Science and Engineering
基金
内蒙古自治区自然科学基金资助项目(2009MS0109)
内蒙古自治区高等学校科技基金资助项目(NJ10017)
关键词
热蒸发
SnS2薄膜
Zn掺杂
热处理
特性
thermal evaporation
SnS 2 thin film
Zn-doping
heat-treatment
properties
