摘要
本文给出了一种基于亚阈值MOS特性的基准电压源.通过使用线性区工作的MOS管代替传统电阻来消除掉迁移率和电流的温度影响,拓宽了温度范围,改善了性能.采用0.5μmCMOS工艺进行仿真.结果表明电路能在2.5～8V范围内工作,线性调整率为0.3mV/V.在3.3V工作电压下,输出基准在-55℃到150℃温度范围内温度系数为7.3ppm/℃,静态功耗为13.8μW,1kHz下电源抑制比为-53dB.该基准电压源的设计能满足宽温度范围、低温漂、低功耗和高电源抑制比的要求.
A voltage reference based on subthreshold is presented in this paper. The MOSFET working in linear region , instead of the traditional resistance, is used to eliminate the mobility and current temperature impact. In this way, the range of temp is broadened and performance is improved. The circuit is simulated with 0. 5vm CMOS model and the result shows that the circuit can work ranging from 2. 5 to 8V and its line regulation is 0. 3mV/V. Under 3.3V operating voltage, the output reference tempcoefficient in -55℃ to 150℃ is 7. 3ppm/℃ ,and its static power is 13.8μW, power supply rejection ration is -53dB at 1kHz. The design of reference meets the requirements of a wide temperature range, low temprature drift, low power and high power supply rejection ration.
出处
《微电子学与计算机》
CSCD
北大核心
2013年第5期108-111,116,共5页
Microelectronics & Computer
关键词
亚阈值基准电压源
线性区
温度系数
电源抑制比
低功耗
subthreshold voltage reference
linear region
temperature coefficient
power supply rejection ratio
low power
