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Y掺杂浓度梯度对BST薄膜结构及介电性能的影响

Effect of Gradient of Y Doped Concentration on Structure and Dielectric Properties of BST Films
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摘要 用改进的溶胶-凝胶(Sol-gel)法制备6层钇(Y)掺杂浓度分别为1%/1.1%/1.2%/1.3%/1.4%/1.5%的梯度Ba0.6Sr0.4TiO3薄膜(1-1.5YBST)和掺杂浓度分别为1%/1.3%/1.6%/1.9%/2.2%/2.5%的梯度Ba0.6Sr0.4TiO3薄膜(1-2.5YBST),研究掺杂浓度梯度对薄膜结构及介电性能的影响。X射线衍射(XRD)表明,两薄膜主要沿(110)晶面生长,为立方钙钛矿结构,比6层Y掺杂浓度均为1%的BST薄膜(YBST)的衍射峰强度及晶化减弱,但掺杂浓度梯度较大的1-2.5YBST对应的衍射强度和晶化较强。原子力显微镜(AFM)表明,1-2.5YBST具有更光滑的形貌。两薄膜比YBST具有高的电容、低的介电损耗、高的调谐率,而1-2.5YBST具有更优异的综合介电性能:零偏压下的电容为17.45 pF(介电常数127)、介电损耗为0.82%及最大调谐率为34.6%、优质因子为42。 Six-Layer Yttrium(Y) grade doped Ba0.6Sr0.4TiO3 thin films (1-1.5YBST and 1-2.5YBST) with doping concentrations of 1%/1.1%/1.2%/1.3%/1.4%/1.5% and 1%/1.3%/1.6%/1.9%/2.2%/2. 5% have been prepared on Pt/Ti/SiO2/Si substrate by improved sol-gel method. The effect of the gradient of Y doping concentration on the structure and dielectric properties of two films has been researched. X-ray diffraction (XRD) showed that two films mainly grow along (110) orientation and show cubic perovskite structure. Compared to the six-layer 1% Y doped BST film, the diffraction peak intensity and crystallization weaken. However, 1-2. 5YBST with larger concentration gradient has stronger diffraction intensity and crystallization. Atomic force microscope(AFM) presented that 1-2.5YBST has smoother and denser morphology, smaller surface roughness and grain size. 1-1.5YBST and 1-2. 5YBST have larger capacitance (dielectric constant), lower dielectric loss and higher tunability. 1-2. 5YBST shows better combination of dielectric properties with capacitance of 17.45 pF ( dielectric constant 127) and dielectric loss (tan) of 0.82% at zero bias, and tunability of 34.6% and figure of merit of 42 at 40 V.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2013年第3期487-490,共4页 Journal of Synthetic Crystals
基金 国家自然科学基金(51172034) 中央高校基本科研业务费专项资金(ZYGX2009X018) 电子科技大学中青年学术带头人培养基金(Y02018023601053)
关键词 掺杂浓度梯度 钛酸锶钡薄膜 溶胶-凝胶法 介电性能 gradient of doping concentration barium strontium titanate films sol-gel dielectric properties
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  • 1Cole M W, Nothwang W D, Hubbard C, et al. Low Dielectric Loss and Enhanced Tunability of Ba0. 6 Sr0.4 TiO3 Based Thin Films via Material Compositional Design and Optimized Film Processing Methods[J]. J. Appl. Phys. ,2003,93( 11 ) :9218. 被引量:1
  • 2Cole M W, Hubbard C, Ngo E, et al. Structure-property Relationships in Pure and Acceptor-doped Ba1-xSrxTiO3 Thin Films for Tunable Microwave Device Applications [ J ]. J. Appl. Phys. , 2002,92 ( 1 ) :475. 被引量:1
  • 3Hu Y T, Wei G L, Ai L D, et al. The Influence of Y-dopant on the Properties of BST Films Derived from a Sol-gel Process[J]. Ferroelectrics, 2001,264( 1 ) :169. 被引量:1
  • 4Liao J X, Wei X B, Xu Z Q, et al. The Structure and Dielectric Properties of a Novel Kind of Doped Ba0. 6 Sr0. 4 TiO3 Film [ J ]. Mater. Chem. Phys. ,2012,135 : 1030. 被引量:1
  • 5Jain M, Majumder S B, Katiyar R S, et al. Improvement in Electrical Characteristics of Graded Manganese Doped Barium Strontium Titanate Thin Films[ J ]. Appl. Phys. Lett. ,2003,82(12) :1911. 被引量:1
  • 6Gao L N, Song S N, Zhai J W, et al. Improvement of Dielectric Properties of Graded Co-doped ( Ba0.7 Sr0.3 ) TiO3 Thin Films Fabricated by Sol- Gel Method [ J ]. Ferroe/ectr/cs ,2007,357 ( 1 ) :142. 被引量:1
  • 7Saha S, Krupanidhi S B. Large Reduction of Leakage Current by Graded Layer La Doping in ( Ba0.5 Sr0. 5 ) TiO3 Thin Films [ J ]. Appl. Phys. Lett., 2001,79(1) :111. 被引量:1
  • 8Majumder S B, Roy B, Katiyar R S, et al. Large Reduction of Leakage Current by Graded-layer La Doping in ( Ba0.5 Sr0.5 ) Ti03 Thin Films [ J ]. Ferroelectrics ,2001,39 (1-4 ) :127. 被引量:1
  • 9Cheng B L, Wang C, Wang S Y, et al. Improvement of the Degradation Characteristics of Sol-gel derived PZT(53/47 ) Thin Films: Effect of Conventional and Graded Iron Doping[ J ]. Appl. Phys. Lett. ,2004,84 (26) :5431. 被引量:1
  • 10Wang C, Chang B L, Wang S Y, et al. Temperature Stability of Permittivity and Dielectric Relaxation in Multilayered Thin Films of ( Ba0. s Sr0.2 ) ( Ti1 - x Zrx ) 03 with a Compositionally Graded Layer [ J ]. Appl. Phys. Lett., 2004,84 ( 5 ) : 765. 被引量:1

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