期刊文献+

Y掺杂(Ba_(0.6)Sr_(0.4))_(0.8)TiO_3薄膜的结构及介电性能

Structure and Dielectric Properties of Yttrium-Doped (Ba_(0.6)Sr_(0.4))_0.8TiO_3 Thin Films by Improved Sol-Gel Method
原文传递
导出
摘要 通过钇(Y)掺杂、适当增加钛(Ti)含量和调节薄膜厚度等优化设计,用改善的溶胶-凝胶(Sol-Gel)法制备了光滑致密的Y掺杂多层钛酸锶钡(Ba0.6Sr0.4)0.8TiO3,BST)薄膜,研究了该薄膜的结构及介电性能。X射线衍射(XRD)表明,该薄膜为钙钛矿结构,但其衍射峰强度很弱,主要与Y掺杂和微过量Ti有效减弱其铁电性有关。原子力显微镜(AFM)表明,该薄膜晶化较弱,且随厚度的增加晶化减弱,和XRD结果一致。该薄膜比Y掺杂的Ba0.6Sr0.4TiO3薄膜显示更优异的综合介电性能,但与薄膜的厚度有关。随膜厚的增加,薄膜的电容和调谐率减小,但介电损耗大幅减小,其中,4层薄膜零偏压的介电常数为161、电损耗约为0.006,40V的调谐率为45.5%、优质因子大于75,可满足微波调谐器件的需要。 The upgraded Y-doped with concentration of 0.5%/0.6%/0.7%/0.8%/0.9%/1% Ba 0.6 Sr 0.4 TiO 3 thin film and downgraded Y-doped with concentration of 1%/0.9%/0.8%/0.7%/0.6%/0.5% Ba0.6Sr0.4 TiO 3 thin film were prepared on Pt/Ti/SiO2 / Si substrates by an improved sol-gel method. X-ray diffraction shows that all thin films mostly grow along (110) oriented crystal face and are cubic perovskite structure. Graded Y-doped BST thin films exhibit stronger phase-configuration diffraction intensities and crystallization than normal Y-doped BST thin films, and the upgraded Y-doped BST film is the best. Atomic force microscope (AFM) result demonstrates that graded Y-doped BST has better surface morphologies than Y-doped BST. What’s more, upgraded Y-doped film has denser and smoother surface morphologies and smaller roughness than downgraded Y-doped BST film. Voltage-capacitance curves obtained at 40 V and 100 kHz illustrate that upgraded Y-doped BST thin films exhibit markedly improved dielectric properties with capacitance 28.5 pf (permittivity 190) and dielectric loss 1.63% at zero bias, 52.3% tunability at 40 V and merit factor value of 32, meeting the needs of microwave applications.
机构地区 电子科技大学
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2013年第S1期100-102,共3页 Rare Metal Materials and Engineering
基金 国家自然科学基金(51172034) 中央高校基本科研业务费专项资金(ZYGX2009X018) 电子科技大学中青年学术带头人培养基金(Y02018023601053)
关键词 钇梯度掺杂 钛酸锶钡薄膜 溶胶-凝胶法 介电性能 Y graded doping barium strontium titanate film sol-gel dielectric properties
  • 相关文献

参考文献12

  • 1廖家轩,王洪全,潘笑风,傅向军,张佳,田忠.改进Sol-Gel法制备Y掺杂BST薄膜表面结构及介电性能研究[J].无机材料学报,2009,24(2):387-391. 被引量:9
  • 2熊惠芳,唐新桂,蒋力立,陈王丽华.(Ba_(0.5)Sr_(0.5))TiO_3/LaNiO_3异质薄膜的介电调谐特性[J].压电与声光,2007,29(1):80-82. 被引量:1
  • 3Jiaxuan Liao,Xubo Wei,Ziqiang Xu,Xiongbang Wei,Peng Wang.The structure and dielectric properties of a novel kind of doped Ba 0.6 Sr 0.4 TiO 3 film[J]. Materials Chemistry and Physics . 2012 (2-3) 被引量:1
  • 4W. F. Qin,J. Zhu,J. Xiong,J. L. Tang,W. J. Jie,X. H. Wei,Y. Zhang,Y. R. Li.Electrical behavior of Y-doped Ba0.6Sr0.4TiO3 thin films[J]. Journal of Materials Science: Materials in Electronics . 2007 (12) 被引量:1
  • 5L. N. Gao,S. N. Song,J. W. Zhai,X. Yao.Improvement of Dielectric Properties of Graded Co-Doped (Ba0.7Sr0.3) TiO3 Thin Films Fabricated by Sol-Gel Method[J]. Ferroelectrics . 2007 (1) 被引量:1
  • 6Sudarman Upali Adikary,Helen Lai-Wa Chan.Characterization of Compositionally Upgraded and Downgraded Ba x Sr 1-x TiO 3 Thin Films[J]. Ferroelectrics . 2002 (1) 被引量:1
  • 7Hu-Yong Tian,Wei-Gen Luo,Ai-Li Ding,Qing-Rui Yin,H. L. W. Chan.The influence of Y-dopant on the properties of BST films derived from a sol-gel process[J]. Ferroelectrics . 2001 (1) 被引量:1
  • 8M Jain,SB Majumder,RS Katiyar,FA Miranda,FW Keuls. Applied Physics Letters . 2003 被引量:1
  • 9Wang R V,Paul C M,John D B et al. Applied Physics Letters . 2005 被引量:1
  • 10Kamehara N,Kurihara K. IEEE9th VLSI Packaging Workshop of Japan . 2008 被引量:1

二级参考文献31

共引文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部