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Cu—Ge 非晶薄膜的形成与晶化研究 被引量:1

FORMATION AND CRYSTALLIZATION OF AMORPHOUS Cu-Ge ALLOY FILMS
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摘要 采用液氮冷却基片的气相沉积法,制备了 Cu-Ge 非晶薄膜。电阻测量及 TEM 形貌、电子衍射等分析表明,非晶态合金的形成能力及稳定性与成分密切相关。对 Cu_(100-x)Ge_x 合金膜,在x<25成分区,形成的非晶态稳定性差,晶化初期出现 fcc 结构的亚稳晶相;在 x>25成分区,有较高稳定性的非晶相形成,晶化后形成 Cu_3Ge 相。用合金化化学键效应观点解释了非晶态的形成、结构及结构转变行为。 Cu-Ge amorphous films with an extensive composition range have beenprepared by vapour quenching onto cooled substrates at liquid nitrogen temperature.Theanalyses of electric resistivity,electron microscopy and diffraction indicate that the amor-phous forming ability and crystallization behaviour are strongly compositional dependence.In the composition range of x<25 for Cu_(100-x)Ge_x(atomic percent),the amorphous phaseshows unstability,and a metastable fcc phase presented in the first step of crystalliztion,while in the x>25 range,the crystallized structure persists in the Cu_3Ge phase,and thereexists a higher stability amorphous phase in this range.An explanation of the amorphousforming,stucture and structural changes emphasizing the effect of chemical bond is pres-ented.
出处 《材料科学进展》 CSCD 1991年第3期199-204,共6页
基金 国家自然科学基金 181231860709
关键词 非晶薄膜 晶化 非晶态 Cu-Ge合金 Cu-Ge alloy amorphous film crystallization
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同被引文献7

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