摘要
基于3.3V0.35μm TSMC 2P4M CMOS体硅工艺,设计了一款1GHz多频带数模混合压控振荡器.采用环形振荡器加上数模转换器结构,控制流入压控振荡器的电流来调节压控振荡器的频率而实现频带切换.仿真结果表明,在1V～2V的电压调节范围内,压控振荡器输出频率范围为823.3MHz～1.061GHz,且压控振荡器的增益仅有36.6MHz/V,振荡频率为1.0612GHz时,频率偏差1MHz处的相位噪声为-96.35dBc/Hz,在获得较大频率调节范围的同时也能保持很低的增益,从而提高了压控振荡器的噪声性能.
Based on the 0. 35 μm 3. 3V TSMC CMOS process, a design for a 1 GHz multi-- band mixed--signal VCO is proposed. The VCO is use Analog to Digital Convertor to adjust the current of the VCO delay cells, so as to achieved multi frequency band. The simulation results presented that the VCO voltage adjustment range is 1V to 2V, and output frequency range is 823.3 MHz to 1. 061 GHz with gain of only 36.6 MHz/V. The novel VCO has a wide frequency range and also keep a very low gain, which improved the VCO noise performance.
出处
《微电子学与计算机》
CSCD
北大核心
2013年第2期1-4,共4页
Microelectronics & Computer
