摘要
本文给出一种基于粒子群优化算法的BSIM SOI MOSFETs模型参数提取方法.该方法采用全局优化策略,计算简单,对初值依赖性低,使用浮点数编码方法,避免了数码转换时所出现的误差.与遗传算法参数提取相比,粒子群优化算法无需进行交叉、变异等操作,容易理解,易于实现,且收敛速度更快.对用该方法得到的参数值代入器件模型进行了计算,计算结果与测试结果吻合很好.本方法亦可用作对其他种类的MOSFETs进行全局参数提取.
A method to extract model parameters based on PSO（Particle Swarm Optimization） algorithm is presented for BSIM SOI（Silicon on Insulator） devices in this paper.Using global optimization,this method has simple calculation and has low dependence on initial value.The use of float-encoding in this method avoids the error of digital transfer.Compared with parameter extraction method based on Genetic Algorithm,this method does not require crossover and mutation operations.And it can be easily understood and implement,and has high speed as well.Computation is very simple using this method and it does not require an in-depth understanding of the model equation or a lot of experience with parameter extraction.Using parameters found by this method,the simulation results are matched well with the measurement data.This method also can be applied to other kind of MOSFETs（Metal-Oxide-Semiconductor Field Effect Transistor） for global parameter extraction.
出处
《微电子学与计算机》
CSCD
北大核心
2013年第1期90-93,共4页
Microelectronics & Computer
基金
中央高校基本科研业务费专项资金
教育部博士点新教师基金项目(20090201120026)
