摘要
当前类单晶硅锭生长技术已能容易地获得尺寸数倍于太阳电池硅片的<001>取向的超大"晶粒",但在其硅片中存在亚晶粒。采用位错刻蚀与显微观察、X射线双晶衍射和背散射电子衍射(EBSD),研究了该类硅片的亚晶粒及亚晶界结构。结果表明:硅片中亚晶粒尺寸为3～6 mm,其中的亚晶界对位错刻蚀十分敏感,为密排位错列组成,亚晶粒内部同时也存在与普通多晶硅锭中平均密度相当的位错;亚晶粒之间相互取向差别小于10°,而且基本是以<001>为轴的旋转位向差,故能够保证(001)面特有的金字塔型碱腐蚀制绒效果;类单晶硅锭的结晶质量有待于进一步提高,应尽量避免亚晶粒的产生。
The 〈001 〉 orientated ultra large grain, whose size several times larger than that of general solar cell wafer, can be easily manufactured by means of the current mono-like crystalline cast technology. However, some subgrains are existed in the silicon east. The subgrains and the subgrain boundary structure of the mentioned silicon were discussed by the technologies of dislocation etching microscopic observation, X-ray double crystal diffraction and electrons back scattered diffraction （EBSD）. The results show that the size of the subgrains are about 3 ~ 6 ram, the subgrain boundaries are close-packed dislocation arrays and very sensitive to the dislocation etching, the dislocation also exist within the subgrains which are not lower than the polycrystalline silicon cast. The misorientation is lower than 10° and is rotation misorientation with the axis of 〈 001 〉 direction which ensure the result of （001） plane pyramid with alkali corrosion texturing. The quality of mono-like crystalline cast needs to be improved and should try to avoid the generation of subgrains.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第2期135-139,共5页
Semiconductor Technology
基金
高等学校博士学科点专项基金新教师类(20113601120006)
关键词
类单晶硅
亚晶粒
亚晶界
位错
背散射电子衍射
位向差
mono-like crystalline silicon
subgrain
subgrain boundary
dislocation
electron back scattered diffraction （EBSD）
misorientation
