摘要
采用分子束外延外延生长技术,优化InGaAsSb/AlGaAsSb多量子阱点材料的生长速率、生长温度和束流比等生长参数,获得了高质量的多量子阱材料。室温光荧光谱表明,材料的发光波长为2.0μm左右。该结果表明,通过优化生长条件和结构参数制备的量子阱材料,可以获得良好的结构质量和光学特性。所制备的器件室温条件下输出功率22mW,阈值电流300mA。
This paper studies parameters of InGaAsSb/AiGaAsSb multi quantum-well （MQW） materials grown by molecu- lar beam epitaxy（MBE）, including the growth rate, growth temperature and flux for high quality MQW materials, respectively. As well, characterization of the epMayers by X-ray diffraction （XRD） indicates high uniformity and excellent crystalline quality with satellite peaks. Emitting wavelength is about 2.0μm measured by photoluminescence（PL） at room temperature （RT）. The excellent crystalline quality and optical characteristic are obtained through optimization of growth conditions and structure parame- ters. The threshold current of the fabricated device is about 300 mA, the output power is 22 mW at room temperature.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2013年第2期505-507,共3页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(61006039
60976056)
总装预研基金项目(232760)
关键词
多量子阱
分子束外延
中红外波段
multiple quantum-well
molecular beam epitaxy
mid infrared
