摘要
采用恒定功耗高温加速的试验方法,搭建了相关的试验系统,对高温工作寿命试验(HTOL)方法在功率GaAs MMIC领域的应用进行了一些探索。试验获得了对失效机理进行分析所需的失效数,所有样品的失效都是由同一原因引起的。通过监测数据和失效样品的分析,发现存在欧姆接触退化与栅金属下沉两种失效机理,但最终引起失效的机理单一,为栅金属下沉。
Constant power dissipation technique has been used in GaAs power MMIC high temperature operating life（HTOL） experiments, then related test system construction, data col- lection and failure mechanism analysis are reported. All samples exhibite very similar phe- nomenon and exists two failure mechanisms： ohmic contact degradation and gate sink. But through on-line data analysis and electronic parameter compare, gate sink is finally confirmed to be the only mechanism leading to failure in HTOL experiments.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2012年第6期542-547,共6页
Research & Progress of SSE
