摘要
介绍了一种利用AT89C51单片机开关控制压电陶瓷微位移器位移的方法,通过单片机的定时器,在安全的TTL电平下实现对压电陶瓷应变片的高压开关控制。该功能是通过选择合适的耐压场效应管实现的,综合开关速率、耐压性、关断电流等方面的因素,采用的场效应管是IRF610型。作出对压电器件、场效应管的选择以及压电陶瓷应变片的单片机驱动电路的设计,并给出了该系统的控制程序。最后对系统进行了仿真实验,仿真结果表明:驱动电压增大,输出位移量也增大,在驱动电压140～200V时,电压增大和减小2个方向测量得到的位移-电压曲线不是重合的,这表明了压电陶瓷的测量迟滞性,驱动电压在150～190V时,函数的线性度最好,两者的迟滞性误差也最小,据此我们可以选择驱动电压范围为150～190V。
This paper designs a micro displacement sensor＇s driving circuit controlled by MCU AT89C51. Through the MCU timer,we can control the high voltage of piezoelectric ceramic in a secure TTL level. The realization of this function is achieved by selecting the appropriate FET tube. Integrated the factors such as switching rate, pressure, and shutdown current and so on,we use FET IRF610. In the paper,we mainly choose both the piezoelectric unit and FET; we also design the driving circuit of the micro displacement sensor controlled by MCU and give control program of the system. In the end we conduct a simulation experiment, the experimental results show that the drive voltage is increased, the output displacement also increases, displacement-voltage curves （voltage increases and decreases）are not coincident displacement in the drive voltage range of 140 V to 200 V, which exactly reflects that the piezoelectric ceramics micro displacement sensor has measurement hysteresis. The linearity of the function is preferably, the hysteresis error is also the smallest between 150- 190 V, Accordingly,we can select the drive voltage range of 150 V to 190 V.
出处
《电子测量技术》
2012年第11期58-62,共5页
Electronic Measurement Technology
基金
山东省优秀青年教师国内访问学者项目
