摘要
基于内透明集电极(ITC)IGBT技术,提出了一种ITC超结IGBT(SJ-IGBT)结构。利用器件仿真工具,研究了SJ-IGBT的导通、开关、短路特性,并与普通平面栅ITC-IGBT技术指标进行了对比。仿真重点侧重于局域载流子寿命控制层(LCLC)位置和控制层内载流子寿命对开关、短路特性的影响。结果显示,与ITC-IGBT相比,SJ-IGBT通态压降与关断损耗折中技术曲线更加靠近原点,综合性能指标优于普通ITC-IGBT;同时,SJ-IGBT短路特性对LCLC位置和载流子局域寿命变化敏感度明显下降。
A new structure of the superjunction IGBT（SJ-IGBT） is presented,which bases on internal transparent collector （ITC）technology.Device simulations have been performed for SJ-IGBT and common planar ITC-IGBT, their I-U charac- teristics, switching and short-circuit performances have been compared.The effects of the location and lifetime of the lo- cal carrier lifetime control on the device characteristics above are mainly discussed.The simulation results show that the SJ-IGBT has a better trade-off curve than ITC-IGBT,and indicate that the comprehensive performance of SJ-IGBT is superior to common ITC-IGBT.Meanwhile, the sensitivity of short-circuit performance of SJ-IGBT obviously decrease.
出处
《电力电子技术》
CSCD
北大核心
2012年第12期57-59,共3页
Power Electronics
基金
国家自然科学资金资助项目(61176071)~~
关键词
绝缘栅双极型晶体管
超结
内透明集电极
insulated gate bipolar transistor
superjunction
internal transparent collector
